Device modelling and characterisation of Hybrid devices

In low-power-high-speed electronic circuits, devices with steeper characteristics are required. The devices speed increases with steeper IV characteristics, and low power is achieved through operating the device in the subthreshold region. The measurement of currents in the subthreshold region is a big challenge. To achieve high switching, we need to propose a new device with the combined advantages of FinFET and TFET. This thesis proposed a hybrid device with an SS value