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Ferroelectric Random Access Memories : Fundamentals and Applications

Printed Book
SR 1,208
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Author:Ishiwara, Hiroshi
Date of Publication: 2010
Book classification:Engineering,English Books
No. of pages:308 Pages
Format:Paperback

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About this Product

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.

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Specifications

SKU9783642073847
Manufacturer Number9783642073847
year published2010
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