Design and optimization of a novel tri-axial miniature ear-plug piezoresistive accelerometer with nanoscale piezoresistors

Doctoral Thesis / Dissertation from the year 2013 in the subject Design (Industry, Graphics, Fashion), grade: N/A, Cranfield University, language: English, abstract: This work aims at the advancement of state-of-art accelerometer design and optimization methodology by developing an ear-plug accelerometer for race car drivers based on a novel mechanical principle. The accelerometer is used for the measurements of head acceleration when an injurious event occurs. Main requirements for such sensor are miniaturization (2×2 mm), because the device must be placed into the driver earpiece, and its measurement accuracy (i.e. high sensitivity, low crosstalk and low nonlinearity) since the device is used for safety monitoring purpose. A micro-electro-mechanical system (MEMS)-based (bulk micromachined) piezoresistive accelerometer was selected as enabling technology for the development of the sensor. The primary accelerometer elements that can be manipulated during the design stage are: the sensing element (piezoresistors), the micromechanical structure and the measurements circuit. Each of these elements has been specifically designed in order to maximize the sensor performance and to achieve the miniaturization required for the studied application. To achieve accelerometer high sensitivity and miniaturization silicon nanowires (SiNWs) as nanometer scale piezoresistors are adopted as sensing elements. Currently this technology is at an infancy stage, but very promising through the exploitation of the "Giant piezoresistance effect" of SiNWs. This work then measures the potential of the SiNWs as nanoscale piezoresistors by calculating the major performance indexes, both electrical and mechanical, of the novel accelerometer. The results clearly demonstrate that the use of nanoscale piezoresistors boosts the sensitivity by 30 times in comparison to conventional microscale piezoresistors. A feasibility study on nanowires fabrication by both top-down and bottom-up approaches is