Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas

Terahertz science and technology is attracting great interest due to its application in a wide array of fields made possible by the development of new and improved terahertz radiation sources and detectors. This book focuses on the development and characterization of one such source - namely the semi-large aperture photoconducting (PC) antenna fabricated on Fe-doped bulk Ga_0.69In_0.31As substrate. The high ultrafast carrier mobility, high resistivity, and subpicosecond carrier lifetime along with low bandgap make Ga_0.69In_0.31As an excellent candidate for PC antenna based THz emitter that can be photoexcited by compact Yb-based multiwatt laser systems for high power THz emission. The research is aimed at evaluating the impact of physical properties of a semi-large aperture Ga_0.69In_0.31As PC antenna upon its THz generation efficiency, and is motivated by the ultimate goal of developing a high-power terahertz radiation source for time-domain terahertz spectroscopy and imaging systems.